SUR1560S symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =100 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 25 15 150 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 100 110 85 95 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 50 50 36 37 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 62 0.4...0.6 2 w nm weight g SUR1560S v rsm v 600 v rrm v 600 c(tab) a=anode, nc= no connection, tab=cathode nc a c a dimensions to-263(d 2 pak) 1. gate 2 . collector 3. emitter 4 . collector botton side dim. millimeter inches min. max. min. max. a 4 .06 4 .83 . 160 .190 a 1 2.03 2.79 .080 .110 b 0 .51 0 .99 . 020 .039 b2 1.14 1.40 .045 .055 c 0 .46 0 .74 . 018 .029 c2 1.14 1.40 .045 .055 d 8 .64 9 .65 . 340 .380 d1 8.00 8.89 .315 .350 e 9 .65 10.29 .380 .405 e 1 6.22 8.13 .245 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0 .20 0 .008 r 0 .46 0 .74 . 018 .029 soft recovery behaviour ultra fast recovery epitaxial diodes p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
SUR1560S advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-263 * glass passivatd chips * very short recovery time * extremely low switching losses * low i rm -values * rohs compliant symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 50 25 3 ua ua ma i r i f =16a; t vj =150 o c t vj =25 o c 1.5 1.7 v v f r thjc r thck r thja 2 60 k/w 0.5 v r =100v; i f =60a; -di f /dt=200a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=200a/us; v r =30v; t vj =25 o c ns i rm a 35 v to for power-loss calculations only 1.12 v r t 23.2 m t vj =t vjm 50 4 _ 4.4 soft recovery behaviour ultra fast recovery epitaxial diodes * soft recovery behaviour p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
SUR1560S f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. soft recovery behaviour ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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